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FQPF19N20

FQPF19N20

FQPF19N20

MOSFET N-CH 200V 11.8A TO220F

non-compliant

FQPF19N20 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $0.84408 -
12000 items
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Bom Cost Down
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 11.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 25 V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F-3
Package / Case TO-220-3 Full Pack
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