Welcome to ichome.com!

logo
Home

FQI7N60TU

FQI7N60TU

FQI7N60TU

POWER FIELD-EFFECT TRANSISTOR, 7

compliant

FQI7N60TU Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $1.25786 -
1000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1430 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.13W (Ta), 142W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

RE1C001ZPTL
NDS0605
NDS0605
$0 $/piece
STL60N10F7
IXFK150N30P3
IXFK150N30P3
$0 $/piece
DMN3110SQ-7
SI7852DP-T1-GE3
FQPF5N90
FQPF5N90
$0 $/piece

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.