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FQI4N20TU

FQI4N20TU

FQI4N20TU

MOSFET N-CH 200V 3.6A I2PAK

compliant

FQI4N20TU Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.31000 $0.31
500 $0.3069 $153.45
1000 $0.3038 $303.8
1500 $0.3007 $451.05
2000 $0.2976 $595.2
2500 $0.2945 $736.25
5000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 220 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.13W (Ta), 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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