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FQI10N20CTU

FQI10N20CTU

FQI10N20CTU

MOSFET N-CH 200V 9.5A I2PAK

non-compliant

FQI10N20CTU Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.37000 $0.37
500 $0.3663 $183.15
1000 $0.3626 $362.6
1500 $0.3589 $538.35
2000 $0.3552 $710.4
2500 $0.3515 $878.75
1055 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 25 V
FET Feature -
Power Dissipation (Max) 72W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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