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FQD17N08LTM

FQD17N08LTM

FQD17N08LTM

MOSFET N-CH 80V 12.9A TO252

compliant

FQD17N08LTM Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.39378 -
4488 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 12.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 6.45A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.5 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 520 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-3 (DPAK)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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