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FQB5N50CTM

FQB5N50CTM

FQB5N50CTM

POWER FIELD-EFFECT TRANSISTOR, 5

non-compliant

FQB5N50CTM Pricing & Ordering

Quantity Unit Price Ext. Price
800 $0.87925 $703.4
1,600 $0.79849 -
2,400 $0.74800 -
5,600 $0.71267 -
5870 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 625 pF @ 25 V
FET Feature -
Power Dissipation (Max) 73W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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