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FQB19N10LTM

FQB19N10LTM

FQB19N10LTM

MOSFET N-CH 100V 19A D2PAK

compliant

FQB19N10LTM Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.55000 $0.55
500 $0.5445 $272.25
1000 $0.539 $539
1500 $0.5335 $800.25
2000 $0.528 $1056
2500 $0.5225 $1306.25
5002 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.75W (Ta), 75W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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