Welcome to ichome.com!

logo
Home

FQA32N20C

FQA32N20C

FQA32N20C

POWER FIELD-EFFECT TRANSISTOR, 3

compliant

FQA32N20C Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.36000 $2.36
10 $2.13400 $21.34
450 $1.52460 $686.07
900 $1.20443 $1083.987
1,350 $1.10533 -
32361 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 82mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2220 pF @ 25 V
FET Feature -
Power Dissipation (Max) 204W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3PN
Package / Case TO-3P-3, SC-65-3
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

IXTA80N10T
IXTA80N10T
$0 $/piece
STB20NM60T4
PSMN0R9-30YLDX
TP0606N3-G
R6520KNZ4C13
SI7478DP-T1-E3
RM1A5N30S3AE
RM1A5N30S3AE
$0 $/piece
UF3C065030B3
UF3C065030B3
$0 $/piece

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.