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FDD2612

FDD2612

FDD2612

MOSFET N-CH 200V 4.9A TO252

non-compliant

FDD2612 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.77000 $0.77
500 $0.7623 $381.15
1000 $0.7546 $754.6
1500 $0.7469 $1120.35
2000 $0.7392 $1478.4
2500 $0.7315 $1828.75
2261 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 720mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 234 pF @ 100 V
FET Feature -
Power Dissipation (Max) 42W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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