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FDD1600N10ALZD

FDD1600N10ALZD

FDD1600N10ALZD

MOSFET N-CH 100V 6.8A TO252-4L

non-compliant

FDD1600N10ALZD Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.38808 -
5000 items
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Bom Cost Down
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Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.61 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 50 V
FET Feature -
Power Dissipation (Max) 14.9W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-4
Package / Case TO-252-5, DPak (4 Leads + Tab), TO-252AD
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