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AOB29S50L

AOB29S50L

AOB29S50L

MOSFET N-CH 500V 29A TO263

non-compliant

AOB29S50L Pricing & Ordering

Quantity Unit Price Ext. Price
800 $2.07150 $1657.2
1,600 $1.93340 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26.6 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1312 pF @ 100 V
FET Feature -
Power Dissipation (Max) 357W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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