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AO4435L_104

AO4435L_104

AO4435L_104

MOSFET P-CH 30V 10.5A 8SOIC

compliant

AO4435L_104 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 20V
Rds On (Max) @ Id, Vgs 14mOhm @ 11A, 20V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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