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Name | Value |
---|---|
Product Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 630mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id | 2.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 50 V |
FET Feature | - |
Power Dissipation (Max) | 1.4W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 |
Package / Case | 3-SMD, SOT-23-3 Variant |
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