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SISS63DN-T1-GE3

SISS63DN-T1-GE3

SISS63DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 35.1/127.5A PPAK

compliant

SISS63DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.05000 $1.05
500 $1.0395 $519.75
1000 $1.029 $1029
1500 $1.0185 $1527.75
2000 $1.008 $2016
2500 $0.9975 $2493.75
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 35.1A (Ta), 127.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 236 nC @ 8 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 7080 pF @ 10 V
FET Feature -
Power Dissipation (Max) 5W (Ta), 65.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
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