Welcome to ichome.com!

logo
Home

SIHD1K4N60E-GE3

SIHD1K4N60E-GE3

SIHD1K4N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 4.2A TO252AA

non-compliant

SIHD1K4N60E-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.32000 $1.32
10 $1.17600 $11.76
100 $0.93630 $93.63
500 $0.73366 $366.83
1,000 $0.58625 -
2,500 $0.54940 -
5,000 $0.52361 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.45Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 172 pF @ 100 V
FET Feature -
Power Dissipation (Max) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

R8002ANJFRGTL
APT19M120J
FDMS7580
FDMS7580
$0 $/piece
DMTH6009LK3-13
MSJP20N65-BP
APT47M60J
IXFN320N17T2
IXFN320N17T2
$0 $/piece
G86N06K
G86N06K
$0 $/piece
CSD18511KCS

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.