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SI3909DV-T1-GE3

SI3909DV-T1-GE3

SI3909DV-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 6TSOP

non-compliant

SI3909DV-T1-GE3 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C -
Rds On (Max) @ Id, Vgs 200mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id 500mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.15W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
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