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SI1912EDH-T1-E3

SI1912EDH-T1-E3

SI1912EDH-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 1.13A SC70-6

non-compliant

SI1912EDH-T1-E3 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.13A
Rds On (Max) @ Id, Vgs 280mOhm @ 1.13A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 100µA (Min)
Gate Charge (Qg) (Max) @ Vgs 1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 570mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6
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