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RV8C010UNHZGG2CR

RV8C010UNHZGG2CR

RV8C010UNHZGG2CR

Rohm Semiconductor

MOSFET N-CH 20V 1A DFN1010-3W

non-compliant

RV8C010UNHZGG2CR Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.64000 $0.64
500 $0.6336 $316.8
1000 $0.6272 $627.2
1500 $0.6208 $931.2
2000 $0.6144 $1228.8
2500 $0.608 $1520
5970 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 470mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1W
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DFN1010-3W
Package / Case 3-XFDFN
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