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PJW1NA60B_R2_00001

PJW1NA60B_R2_00001

PJW1NA60B_R2_00001

600V N-CHANNEL MOSFET

compliant

PJW1NA60B_R2_00001 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.50000 $0.5
500 $0.495 $247.5
1000 $0.49 $490
1500 $0.485 $727.5
2000 $0.48 $960
2500 $0.475 $1187.5
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.1 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 210 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
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