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NTJD1155LT1G

NTJD1155LT1G

NTJD1155LT1G

onsemi

MOSFET N/P-CH 8V 1.3A SOT363

non-compliant

NTJD1155LT1G Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.13145 -
6,000 $0.12386 -
15,000 $0.11627 -
30,000 $0.10716 -
75,000 $0.10336 -
1254 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 1.3A
Rds On (Max) @ Id, Vgs 175mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 400mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
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