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NTD4959N-1G

NTD4959N-1G

NTD4959N-1G

onsemi

MOSFET N-CH 30V 9A/58A IPAK

compliant

NTD4959N-1G Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 11.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1456 pF @ 12 V
FET Feature -
Power Dissipation (Max) 1.3W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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