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FQB7N10LTM

FQB7N10LTM

FQB7N10LTM

onsemi

MOSFET N-CH 100V 7.3A D2PAK

non-compliant

FQB7N10LTM Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
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2500 $0 $0
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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 3.65A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.75W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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