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NX3008PBKMB,315

NX3008PBKMB,315

NX3008PBKMB,315

NXP USA Inc.

MOSFET P-CH 30V 300MA DFN1006B-3

non-compliant

NX3008PBKMB,315 Pricing & Ordering

Quantity Unit Price Ext. Price
10,000 $0.04488 -
825447 items
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.72 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 46 pF @ 15 V
FET Feature -
Power Dissipation (Max) 360mW (Ta), 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DFN1006B-3
Package / Case SC-101, SOT-883
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