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IXFN50N80Q2

IXFN50N80Q2

IXFN50N80Q2

IXYS

MOSFET N-CH 800V 50A SOT-227B

non-compliant

IXFN50N80Q2 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $43.49000 $43.49
10 $40.67200 $406.72
30 $37.61600 $1128.48
100 $35.26500 $3526.5
250 $32.91400 $8228.5
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 260 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 13500 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1135W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
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