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IPD60R600P7SE8228AUMA1

IPD60R600P7SE8228AUMA1

IPD60R600P7SE8228AUMA1

MOSFET N-CH 600V 6A TO252-3

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IPD60R600P7SE8228AUMA1 Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id 4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 363 pF @ 400 V
FET Feature -
Power Dissipation (Max) 30W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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