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BSC252N10NSFGATMA1

BSC252N10NSFGATMA1

BSC252N10NSFGATMA1

MOSFET N-CH 100V 7.2A/40A TDSON

non-compliant

BSC252N10NSFGATMA1 Pricing & Ordering

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5,000 $0.54433 -
10,000 $0.52622 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 7.2A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 25.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 43µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 50 V
FET Feature -
Power Dissipation (Max) 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN
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