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GT100N12M

GT100N12M

GT100N12M

N120V,RD(MAX)<10M@10V,VTH2.5V~3.

non-compliant

GT100N12M Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.78000 $1.78
500 $1.7622 $881.1
1000 $1.7444 $1744.4
1500 $1.7266 $2589.9
2000 $1.7088 $3417.6
2500 $1.691 $4227.5
800 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3050 pF @ 60 V
FET Feature -
Power Dissipation (Max) 120W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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